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 PHOTODIODE
Si PIN photodiode
S5821 series
High performance, high reliability Si PIN photodiodes
S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series provides high performance and reliability at a low cost.
Features
Applications
l High-speed response l Wide spectral response l Low dark current l Low terminal capacitance
l Optical switch l Automobile optical sensor l General photometry
s General ratings / Absolute maximum ratings
Type No. Dimensional outline/ Window material * /K /L /K /L Package (mm) TO-18 Active area size (mm) 1.2 Effective active area (mm2) 1.1 Reverse voltage VR Max. (V) 20 Absolute maximum ratings Power Operating Storage dissipation temperature temperature P Topr Tstg (mW) (C) (C) 50 -40 to +100 -55 to +125
S5821 S5821-01 S5821-02 S5821-03
s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Terminal Short Dark Temp. Cut-off NEP capacitance circuit current coefficient frequency VR=10 V Ct current ID of ID fc Type No. VR=10 V VR=10 V Isc =p TCID VR=10 V (nA) f=1 MHz p 660 nm 780 nm 830 nm 100 lx (nm) (nm) (A) Typ. Max. (times/C) (MHz) (pF) (W/Hz1/2) S5821 1.1 S5821-01 12 320 to 1100 960 0.6 0.45 0.52 0.55 0.05 2 1.15 25 3 6.7 x 10-15 S5821-02 1.1 12 S5821-03 * Window material K: borosilicate glass, L: lens type borosilicate glass Spectral Peak response sensitivity range wavelength p Photo sensitivity S (A/W)
1
Si PIN photodiode
s Spectral response
(Typ. Ta=25 C)
30
0.6
S5821 series
s Directivity
20 10 0 100 % 10 (Typ. Ta=25 C) 20 30
0.7
PHOTO SENSITIVITY (A/W)
80 %
0.5
40
0.4 0.3 0.2 0.1
S5821 S5821-02
40 60 %
50 40 % 60 70 80 20% S5821-01 S5821-03
50 60 70 80 90
0 200
90
400 600 800 1000
WAVELENGTH (nm)
RELATIVE SENSITIVITY
KPINB0151EA
KPINB0091EA
s Photo sensitivity temperature characteristic
(Typ.)
s Frequency response
(Typ. Ta=25 C, =830 nm, RL=50 , VR=10 V)
+1.5
+10
TEMPERATURE COEFFICIENT (%/C)
RELATIVE OUTPUT (dB)
+1.0
0 -3
+0.5
-10
0
-0.5 200
400
600
800
1000
-20 100 kHz
1 MHz
10 MHz
100 MHz
1 GHz
WAVELENGTH (nm)
FREQUENCY
KPINB0152EA
KPINB0153EA
2
Si PIN photodiode
s Cut-off frequency vs. reverse voltage
1 GHz (Typ. Ta=25 C, =830 nm, RL=50 )
S5821 series
s Dark current vs. reverse voltage
(Typ. Ta=25 C)
1 nA
CUT-OFF FREQUENCY
100 MHz
DARK CURRENT
1 10 100
100 pA
10 MHz
10 pA
1 MHz
1 pA 0.1
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KPINB0154EA
KPINB0155EA
s Terminal capacitance vs. reverse voltage
(Typ. Ta=25 C, f=1 MHz) 100 pF
TERMINAL CAPACITANCE
10 pF
1 pF 0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0156EA
3
Si PIN photodiode
s Dimensional outline (unit: mm) S5821
WINDOW 3.0 0.2 5.4 0.2
S5821 series
S5821-01
5.4 0.2
2.15 0.3 14 4.5 0.2
2.8
3.6 0.2
4.7 0.1
4.65 0.1
0.45 LEAD
0.45 LEAD
2.54 0.2
8.5
2.3
2.54 0.2
CONNECTED TO CASE
CONNECTED TO CASE
KPINA0074EB
KPINA0075EA
S5821-02
WINDOW 3.0 0.2 5.4 0.2
3.6 0.2
S5821-03
5.4 0.2 4.65 0.1
2.15 0.3
4.7 0.1
PHOTOSENSITIVE SURFACE 0.45 LEAD
0.45 LEAD
13
2.54 0.2
2.54 0.2
CASE
CASE
KPINA0022EB
13
4.5 0.2
2.8
2.8
KPINA0046EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KPIN1010E02 Aug. 2006 DN


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